[PDF.11ay] Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications (Electronic Materials Series)

Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications (Electronic Materials Series)

[PDF.mz64] Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications (Electronic Materials Series)

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 | #6051241 in Books |  1997-10-31 | Original language:English | PDF # 1 |  9.21 x1.31 x6.14l,2.31 | File type: PDF | 592 pages

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The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe­ family substrates these materials are included in this book, altho...

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